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 Transmissive Photosensors (Photo Interrupters)
CNA1007H
Photo Interrupter
Unit : mm
For contactless SW, object detection Overview
CNA1007H is a transmissive photosensor in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other, and objects passing between them are detected.
(3.2)
14.0 5.00.15 A
6.0 5.0 1.50.15 Device Center (C1)
3.50.5 10.0 2.5 1.3
A' (10.0) 1.8 3
(4-0.45)
1.65
Features
Position detection accuracy : 0.3 mm Gap width : 5 mm Horizontal slit type The type directly attached to PCB ( with a positioning pins)
+0 1.2 -0.1
2
1
4
Absolute Maximum Ratings (Ta = 25C)
Parameter Input (Light Forward current (DC) emitting diode) Power dissipation Collector current Reverse voltage (DC) Symbol Ratings VR IF PD*1 IC 5 50 75 20 30 5 100 - 40 to +100 Unit V mA mW mA V V mW C C
Internal connector 2 3
1 Pin connection
Output (Photo Collector to emitter voltage VCEO transistor) Emitter to collector voltage VECO Collector power dissipation Temperature
*1
PC*2 Tstg
Operating ambient temperature Storage temperature
Topr -25 to +85
Input power derating ratio is 1.0 mW/C at Ta = 25C. *2 Output power derating ratio is 1.33 mW/C at Ta = 25C.
Electrical Characteristics (Ta = 25C)
Parameter Input characteristics Reverse current (DC) Forward voltage (DC) Symbol VF IR ICEO VR = 3V VCE = 10V 0.5 5 Conditions IF = 20mA min typ 1.25 max 1.4 10 200 14 0.4 Unit V A nA mA V s
Output characteristics Collector cutoff current
Collector current IC VCE = 5V, IF = 20mA Transfer Collector to emitter saturation voltage VCE(sat) IF = 40mA, IC = 1mA characteristics Response time tr , tf* VCC = 5V, IC = 1mA, RL = 100
*
Switching time measurement circuit
Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% tr tf tr : Rise time (Time required for the collector current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector current to decrease from 90% to 10% of its initial value)
,,
,,
50
RL
,,,
4
(4-0.45) (2.54) SEC. A-A'
0.50.1
1
CNA1007H
Transmissive Photosensors (Photo Interrupters)
IF , IC -- Ta
60 60
IF -- VF
1.6 Ta = 25C
VF -- Ta
IF = 50mA
IF , IC (mA)
50
IF
50
IF (mA)
Forward current, collector current
VF (V)
1.2 10mA 1mA 0.8
40
40
30 IC
Forward current
30
20
20
Forward voltage
0 0.4 0.8 1.2 1.6 2.0 2.4
0.4
10
10
0 - 25
0
20
40
60
80
100
0
0 - 40 - 20
0
20
40
60
80
100
Ambient temperature Ta (C )
Forward voltage VF (V)
Ambient temperature Ta (C )
IC -- IF
10 2 VCE = 5V Ta = 25C 10 2
IC -- VCE
160 Ta = 25C
IC -- Ta
VCE = 5V IF = 20mA
IC (mA)
10
IC (mA)
10
IF = 30mA 20mA 10mA
IC (%) Relative output current
10 2
120
Collector current
1
Collector current
1
80
10 -1
10 -1
40
10 -2 10 -1
1
10
10 2
10 -2 10 -1
1
10
0 - 40 - 20
0
20
40
60
80
100
Forward current IF (mA)
Collector to emitter voltage VCE (V)
Ambient temperature Ta (C )
ICEO -- Ta
10 3 VCE = 10V 10 2
tr -- IC
VCC = 5V Ta = 25C 100
IC -- d
10 2
ICEO (nA)
10
RL = 1k 500 100
80
10
Relative output current
60
Dark current
1
Rise time
1
40
10 -1 10 -1
Sig.IN Sig. OUT 50
VCC Sig. OUT RL 90% 10%
20
10 -2 - 40 - 20
, ,,
0
20
40
60
80
100
10 -2 10 -1
tr
td
tf
102 0 0 1 2 3 4 5 6
1
10
Ambient temperature Ta (C )
Collector current IC (mA)
2
,, ,
0 d Criterion
VCE = 5V Ta = 25C IF = 20mA
tr (s)
IC (%)
Distance d (mm)
Transmissive Photosensors (Photo Interrupters)
CNA1007H
IC -- d
100
80
Relative output current
60
40
20
0
0
1
,, ,
Criterion 0 d 2 3 4 5 6
VCE = 5V Ta = 25C IF = 20mA
IC (%)
Distance d (mm)
3
Caution for Safety
Gallium arsenide material (GaAs) is used in this product.
DANGER
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide material in powder or vapor form is harmful to human health. Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of GaAs-containing products.
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and afterunpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR


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